Use of diethylselenide for the preparation of CuInGaSe2 films by selenization of metal precursors premixed with Se

Mutsumi Sugiyama, Francis B. Dejene, Atsuki Kinoshita, Masahiro Fukaya, Vivian Alberts, Hisayuki Nakanishi, Shigefusa F. Chichibu

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

The use of a less-hazardous organometallic Se source, diethylselenide [(C2H5)2Se: DESe], enabled to grow single-phase CuInGaSe2 solid solutions for high-efficiency solar cell application by the selenization of metal precursors without additional thermal annealing. Distinct from the case using Se vapor or H2Se gas, uniform CuInGaSe2 films were obtained from Cu-In-Ga metal precursors premixed with Se. In contrast, the films formed from Se-free precursors separated into two phases with different compositions. Photoluminescence spectra of approximately 2.0-μm-thick films at 77 K were dominated by the defect-related donor-acceptor pair and free electron-to-acceptor recombination emissions particular to the CulnGaSe2 films that are used for high conversion efficiency solar cells.

本文言語English
ページ(範囲)2543-2546
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
3
8
DOI
出版ステータスPublished - 31 10月 2006
イベント15th International Conference on Ternary and Multinary Compounds, ICTMC-15 - Kyoto, Japan
継続期間: 6 3月 200610 3月 2006

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