Three dimensional nano fabrication of single crystal silicon by focused ion beam and subsequent wet chemical etching

Noritaka Kawasegi, Noboru Morita, Shigeru Yamada, Noboru Takano, Tatsuo Oyama, Kiwamu Ashida, Jun Taniguchi, Iwao Miyamoto

研究成果: Conference contribution査読

抄録

This study aims to fabricate three dimensional nanostructures of single crystal silicon by focused ion beam (FIB) process and subsequent wet chemical etching. Irradiated area by FIB acts as a mask against KOH solution, and consequently protruding nanostructures having several hundreds of nanometers in height can be fabricated through etch process. In order to control the height of nanostructures, the dependence of the masking effect on FIB irradiating conditions are studied under various parameters. As a result, it is found that the masking effect can be controlled by FIB irradiating conditions such as dose, accelerate voltage and dot pitch. Finally, three dimensional nanostructures can be fabricated based on these results, which indicates a possibility of industrial application as a novel three dimensional nanofabrication process.

本文言語English
ホスト出版物のタイトルProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress of Machining Technology, ICPMT'2004
編集者W. Chen, Y. Yamane, R. Fan, A. Ochi
ページ330-335
ページ数6
出版ステータスPublished - 1 12月 2004
イベントProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress Machining Technology, ICPMT'2004 - Suzhou, China
継続期間: 8 12月 200411 12月 2004

出版物シリーズ

名前Progress of Machining Technology - Proceedings of the Seventh International Conference on Progress of Machining Technology, ICPMT'2004

Conference

ConferenceProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress Machining Technology, ICPMT'2004
国/地域China
CitySuzhou
Period8/12/0411/12/04

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