Keyphrases
2-dimensional Electron Gas (2DEG)
14%
Aluminum Gallium Nitride (AlGaN)
14%
Channel Layer
28%
Contact Resistance
28%
Drain Regions
14%
Electronic Devices
14%
Energy Barrier
14%
Fermi Level
14%
High Al Content
14%
High Electron Mobility Transistor
100%
High Power Density
14%
High Temperature
28%
ION-IOFF
14%
Level Difference
14%
Low Resistivity
14%
N-type GaN
100%
Ohmic Contact
42%
On-resistance
14%
Pulsed Sputtering Deposition
28%
Radio Frequency Transistor
14%
Regrown Ohmic Contact
100%
Regrowth
14%
Sheet Resistance
14%
Source Area
14%
Switching Characteristics
14%
Temperature Effect
28%
Temperature Range
28%
Temperature Variation
14%
Temperature-dependent Characteristics
100%
Engineering
Channel Layer
50%
Drain Region
25%
Energy Barrier
25%
Fermi Level
25%
Limitations
25%
Ohmic Contacts
100%
Power Density
25%
Radio Frequency
25%
Sheet Resistance
25%
Source Region
25%
Temperature Dependence
25%
Temperature Range
50%
Two Dimensional
25%
Material Science
Aluminum Nitride
100%
Contact Resistance
40%
Density
20%
Electrical Resistivity
20%
Electron Mobility
100%
Transistor
100%