Sulfurization growth of SnS films and fabrication of ZnO/SnS heterojunction for solar cells

T. Hirano, T. Shimizu, K. Yoshida, M. Sugiyama

研究成果: Conference contribution査読

4 被引用数 (Scopus)

抄録

Polycrystalline tin sulfide (SnS) films were grown by sulfurization. The SnS film sulfurized at 400°C comprises densely packed 300-800-nm-diameter columnar grains, and the surface of the SnS film revealed that no crack and pinhole were observed, which are appropriate for use in the photoabsorption layers of SnS solar cells. Using appropriate SnS film, SnS solar cells with an n-CdS/p-SnS and with an n-ZnO/p-SnS structure were fabricated on Mo-coated SLG substrates. The conversion efficiency is improved just due to the using of the ZnO as an n-type layer instead of CdS. These results represent the first step toward realizing high-performance solar cells using a SnS film grown by sulfurization using conventional and large-scale equipment.

本文言語English
ホスト出版物のタイトルProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
ページ1280-1282
ページ数3
DOI
出版ステータスPublished - 1 12月 2011
イベント37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
継続期間: 19 6月 201124 6月 2011

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
国/地域United States
CitySeattle, WA
Period19/06/1124/06/11

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