TY - GEN
T1 - Silicon-Based Vapor Chamber with Jumping Droplet Structures via MEMS Technology
AU - Yanagisawa, Naoki
AU - Matsumae, Takashi
AU - Hayase, Masanori
AU - Kurashima, Yuichi
AU - Takagi, Hideki
N1 - Publisher Copyright:
© 2026 IEEE.
PY - 2026
Y1 - 2026
N2 - A silicon-based vapor chamber incorporating jumping droplet structures was developed using MEMS technology. Superhydrophobic micropillar surfaces were fabricated to enhance working fluid circulation, enabling efficient heat spreading for compact electronic devices.
AB - A silicon-based vapor chamber incorporating jumping droplet structures was developed using MEMS technology. Superhydrophobic micropillar surfaces were fabricated to enhance working fluid circulation, enabling efficient heat spreading for compact electronic devices.
UR - https://www.scopus.com/pages/publications/105043452004
U2 - 10.1109/LTB-3D69101.2026.11555363
DO - 10.1109/LTB-3D69101.2026.11555363
M3 - Conference contribution
AN - SCOPUS:105043452004
T3 - 2026 9th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2026
SP - 14P11
BT - 2026 9th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2026
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2026
Y2 - 13 May 2026 through 15 May 2026
ER -