Reaction pathway analysis for the contraction of 4H-SiC partial-dislocations pair in the vicinity of surface

Keyphrases

• 4H-SiC 100%
• 4H-SiC Substrates 20%
• Basal Plane Dislocation 60%
• Burgers Vector 20%
• Conversion Ratio 20%
• Cross-slip 20%
• Dislocation 20%
• Dislocation Segment 20%
• Energy Barrier 20%
• Improvement Methods 20%
• Molecular Dynamics 20%
• Partial Dislocations 100%
• Reaction Path Analysis 100%
• Screw Dislocation 20%
• Threading Edge Dislocation 60%

Engineering

• Basal Plane 60%
• Conversion Ratio 20%
• Cross Slip 20%
• Edge Dislocation 60%
• Energy Barrier 20%
• Partial Dislocation 100%
• Screw Dislocation 20%
• Threading Dislocation 60%