TY - JOUR
T1 - Pressure-Driven Eu2+-Doped BaLi2Al2Si2N6
T2 - A New Color Tunable Narrow-Band Emission Phosphor for Spectroscopy and Pressure Sensor Applications
AU - Wang, Yichao
AU - Seto, Takatoshi
AU - Ishigaki, Kento
AU - Uwatoko, Yoshiya
AU - Xiao, Guanjun
AU - Zou, Bo
AU - Li, Guangshe
AU - Tang, Zuobin
AU - Li, Zebin
AU - Wang, Yuhua
N1 - Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/8/1
Y1 - 2020/8/1
N2 - A series of BaLi2Al2Si2N6 (BLASN): xEu2+ phosphors are successfully synthesized and their crystal structure and luminescence properties under varying hydrostatic pressures are reported herein. Structure variation is analyzed using in situ high-pressure X-ray diffraction and Rietveld refinements. Based on decay curves and Gaussian fitting of emission spectra, the presence of two photoluminescence centers is demonstrated. BaLi2Al2Si2N6: 0.01Eu2+ exhibits an evident peak position shift from 532 to 567 nm with an increase in pressure to ≈20 GPa. The possible factors and mechanisms for the variations are studied in detail. At a pressure of 16 GPa, BLASN: Eu2+ realizes a narrow yellow emission with a full width at half maximum of ≈70 nm. The addition of BLASN: Eu2+ (16 GPa) to the commercial white light-emitting diodes combination consisting of an InGaN chip, β-SiAlON: Eu2+, and red K2SiF6:Mn4+, can increase the color gamut by ≈15%, demonstrating the promising potential of pressure-driven BLASN: Eu2+ for wide-color gamut spectroscopy applications. Moreover, the emission shifts arising from pressure variation and the distinct color changes enable its potential utility as an optical pressure sensor; the material exhibits high pressure sensitivity (dλ/dP ≈ 1.58 nm GPa−1) with the advantage of visualization.
AB - A series of BaLi2Al2Si2N6 (BLASN): xEu2+ phosphors are successfully synthesized and their crystal structure and luminescence properties under varying hydrostatic pressures are reported herein. Structure variation is analyzed using in situ high-pressure X-ray diffraction and Rietveld refinements. Based on decay curves and Gaussian fitting of emission spectra, the presence of two photoluminescence centers is demonstrated. BaLi2Al2Si2N6: 0.01Eu2+ exhibits an evident peak position shift from 532 to 567 nm with an increase in pressure to ≈20 GPa. The possible factors and mechanisms for the variations are studied in detail. At a pressure of 16 GPa, BLASN: Eu2+ realizes a narrow yellow emission with a full width at half maximum of ≈70 nm. The addition of BLASN: Eu2+ (16 GPa) to the commercial white light-emitting diodes combination consisting of an InGaN chip, β-SiAlON: Eu2+, and red K2SiF6:Mn4+, can increase the color gamut by ≈15%, demonstrating the promising potential of pressure-driven BLASN: Eu2+ for wide-color gamut spectroscopy applications. Moreover, the emission shifts arising from pressure variation and the distinct color changes enable its potential utility as an optical pressure sensor; the material exhibits high pressure sensitivity (dλ/dP ≈ 1.58 nm GPa−1) with the advantage of visualization.
KW - BaLi Al Si N : Eu
KW - narrow-band phosphor
KW - optical pressure sensor
KW - photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=85087203342&partnerID=8YFLogxK
U2 - 10.1002/adfm.202001384
DO - 10.1002/adfm.202001384
M3 - Article
AN - SCOPUS:85087203342
SN - 1616-301X
VL - 30
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 34
M1 - 2001384
ER -