TY - JOUR
T1 - Pressure control of transport property of organic conductors; α-, θ-(BEDT-TTF)2l3 and θ-(DIETS) 2[Au(CN)4]
AU - Tajima, N.
AU - Tajima, A.
AU - Tamura, M.
AU - Kato, R.
AU - Nishio, Y.
AU - Kajita, K.
PY - 2004
Y1 - 2004
N2 - Transport properties of three organic systems, α-(BEDT-TTF) 2I3, θ-(BEDT-TTF)2I3 and θ-(DIETS)2[Au(CN)4], as controlled by hydrostatic pressure or uniaxial strain, are overviewed. We found interconversion between a narrow-gap semiconductor and a metal both in two types of (BEDT-TTF) 2I3 salts. By application of uniaxial strain along the b-axis, the narrowgap semiconductor state, found in α-(BEDT-TTF) 2I3 under hydrostatic pressure, is transformed into a metallic state similar to that in θ-(BEDT-TTF)2I3 under ambient pressure. On the other hand, θ-(BEDT-TTF)2I 3 undergoes a transition to a narrow-gap semiconductor state by application of hydrostatic pressure of about 5 kbar. For θ-(DIETS) 2[Au(CN)4], stabilization of metallic state, accompanied by superconductivity, is observed only when a uniaxial strain perpendicular to the conduction layers is applied. This peculiar behavior is attributable to the unconventional supramolecular architecture of this material.
AB - Transport properties of three organic systems, α-(BEDT-TTF) 2I3, θ-(BEDT-TTF)2I3 and θ-(DIETS)2[Au(CN)4], as controlled by hydrostatic pressure or uniaxial strain, are overviewed. We found interconversion between a narrow-gap semiconductor and a metal both in two types of (BEDT-TTF) 2I3 salts. By application of uniaxial strain along the b-axis, the narrowgap semiconductor state, found in α-(BEDT-TTF) 2I3 under hydrostatic pressure, is transformed into a metallic state similar to that in θ-(BEDT-TTF)2I3 under ambient pressure. On the other hand, θ-(BEDT-TTF)2I 3 undergoes a transition to a narrow-gap semiconductor state by application of hydrostatic pressure of about 5 kbar. For θ-(DIETS) 2[Au(CN)4], stabilization of metallic state, accompanied by superconductivity, is observed only when a uniaxial strain perpendicular to the conduction layers is applied. This peculiar behavior is attributable to the unconventional supramolecular architecture of this material.
KW - Carrier density
KW - Hall effect
KW - Mobility
KW - Narrow-gap semiconductor
KW - Superconductor
KW - Uniaxial strain
UR - http://www.scopus.com/inward/record.url?scp=33645167333&partnerID=8YFLogxK
U2 - 10.1051/jp4:2004114055
DO - 10.1051/jp4:2004114055
M3 - Conference article
AN - SCOPUS:33645167333
SN - 1155-4339
VL - 114
SP - 263
EP - 267
JO - Journal De Physique. IV : JP
JF - Journal De Physique. IV : JP
T2 - ISCOM 2003: 5th International Symposium on Crystalline Organic Metals, Superconductors and Ferromagnets
Y2 - 21 September 2003 through 26 September 2003
ER -