TY - JOUR
T1 - Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering
AU - Masaki, Shingo
AU - Nakanishi, Hisayuki
AU - Sugiyama, Mutsumi
AU - Chichibu, Shigefusa F.
PY - 2008
Y1 - 2008
N2 - Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.
AB - Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.
UR - http://www.scopus.com/inward/record.url?scp=70349419680&partnerID=8YFLogxK
U2 - 10.1002/pssc.200779182
DO - 10.1002/pssc.200779182
M3 - Conference article
AN - SCOPUS:70349419680
SN - 1862-6351
VL - 5
SP - 3135
EP - 3137
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 9
T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007
Y2 - 15 October 2007 through 18 October 2007
ER -