TY - JOUR
T1 - Preparation of SnS films by low temperature sulfurization
AU - Minemura, Takehiro
AU - Miyauchi, Keisuke
AU - Noguchi, Koji
AU - Ohtsuka, Kenichi
AU - Nakanishi, Hisayuki
AU - Sugiyama, Mutsumi
PY - 2009
Y1 - 2009
N2 - Polycrystalline tin sulfide (SnS) films were grown by sulfurization of Sn precursor at low temperatures of 120-220 °C. The p-type conductivity SnS film grown at 170 °C comprises densely packed 3-5-μm-diameter columnar grains, which is appropriate for use in photoabsorption layers of solar cells. The SnS film had an optical bandgap of about 1.3 eV. Using an appropriate SnS film, n-CdS/p-SnS heterojunction was fabricated on Mo-coated soda-lime glass substrates. These results are the first step toward realizing an optical device as a solar cell using a SnS film grown using sulfurization.
AB - Polycrystalline tin sulfide (SnS) films were grown by sulfurization of Sn precursor at low temperatures of 120-220 °C. The p-type conductivity SnS film grown at 170 °C comprises densely packed 3-5-μm-diameter columnar grains, which is appropriate for use in photoabsorption layers of solar cells. The SnS film had an optical bandgap of about 1.3 eV. Using an appropriate SnS film, n-CdS/p-SnS heterojunction was fabricated on Mo-coated soda-lime glass substrates. These results are the first step toward realizing an optical device as a solar cell using a SnS film grown using sulfurization.
UR - http://www.scopus.com/inward/record.url?scp=70349421223&partnerID=8YFLogxK
U2 - 10.1002/pssc.200881166
DO - 10.1002/pssc.200881166
M3 - Conference article
AN - SCOPUS:70349421223
SN - 1862-6351
VL - 6
SP - 1221
EP - 1224
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 5
T2 - 16th International Conference on Ternary and Multinary Compounds, ICTMC16
Y2 - 15 September 2008 through 19 September 2008
ER -