PMMA direct patterning by synchrotron radiation using SOG mask

J. Taniguchi; S. Takezawa; K. Kanda; Y. Haruyama; S. Matsui; I. Miyamoto

doi:10.1109/IMNC.2002.1178620

PMMA direct patterning by synchrotron radiation using SOG mask

J. Taniguchi, S. Takezawa, K. Kanda, Y. Haruyama, S. Matsui, I. Miyamoto

電子システム工学科

研究成果: Conference contribution › 査読

1 被引用数 (Scopus)

抄録

We found that Spin-On-Glass (SOG) material acts as positive-type electron beam resist, and 200 nm line pattern was obtained using 100 nm beam diameter electron beam exposure and following buffered HF (BHF) development. Our previous report, (Jpn. J. Appl. Phys., vol.41, p.4304-4306, (2002)), direct etching of SOG by synchrotron radiation (SR) was confirmed, however, etching rate of polymethylmethacrylate (PMMA) was much higher than that of SOG. Therefore, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as PMMA by SR exposure. In this report; etching of PMMA by SR using SOG mask was examined.

本文言語	English
ホスト出版物のタイトル	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	214
ページ数	1
ISBN（電子版）	4891140313, 9784891140311
DOI	https://doi.org/10.1109/IMNC.2002.1178620
出版ステータス	Published - 2002
イベント	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan 継続期間: 6 11月 2002 → 8 11月 2002

出版物シリーズ

名前	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2002
国/地域	Japan
City	Tokyo
Period	6/11/02 → 8/11/02

文献へのアクセス

10.1109/IMNC.2002.1178620

他のファイルとリンク

Link to publication in Scopus

引用スタイル

Taniguchi, J., Takezawa, S., Kanda, K., Haruyama, Y., Matsui, S., & Miyamoto, I. (2002). PMMA direct patterning by synchrotron radiation using SOG mask. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 214). 記事 1178620 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178620

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title = "PMMA direct patterning by synchrotron radiation using SOG mask",

abstract = "We found that Spin-On-Glass (SOG) material acts as positive-type electron beam resist, and 200 nm line pattern was obtained using 100 nm beam diameter electron beam exposure and following buffered HF (BHF) development. Our previous report, (Jpn. J. Appl. Phys., vol.41, p.4304-4306, (2002)), direct etching of SOG by synchrotron radiation (SR) was confirmed, however, etching rate of polymethylmethacrylate (PMMA) was much higher than that of SOG. Therefore, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as PMMA by SR exposure. In this report; etching of PMMA by SR using SOG mask was examined.",

author = "J. Taniguchi and S. Takezawa and K. Kanda and Y. Haruyama and S. Matsui and I. Miyamoto",

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doi = "10.1109/IMNC.2002.1178620",

language = "English",

series = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Taniguchi, J, Takezawa, S, Kanda, K, Haruyama, Y, Matsui, S & Miyamoto, I 2002, PMMA direct patterning by synchrotron radiation using SOG mask. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178620, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 214, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 6/11/02. https://doi.org/10.1109/IMNC.2002.1178620

PMMA direct patterning by synchrotron radiation using SOG mask. / Taniguchi, J.; Takezawa, S.; Kanda, K. その他.
2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 214 1178620 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

研究成果: Conference contribution › 査読

TY - GEN

T1 - PMMA direct patterning by synchrotron radiation using SOG mask

AU - Taniguchi, J.

AU - Takezawa, S.

AU - Kanda, K.

AU - Haruyama, Y.

AU - Matsui, S.

AU - Miyamoto, I.

PY - 2002

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N2 - We found that Spin-On-Glass (SOG) material acts as positive-type electron beam resist, and 200 nm line pattern was obtained using 100 nm beam diameter electron beam exposure and following buffered HF (BHF) development. Our previous report, (Jpn. J. Appl. Phys., vol.41, p.4304-4306, (2002)), direct etching of SOG by synchrotron radiation (SR) was confirmed, however, etching rate of polymethylmethacrylate (PMMA) was much higher than that of SOG. Therefore, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as PMMA by SR exposure. In this report; etching of PMMA by SR using SOG mask was examined.

AB - We found that Spin-On-Glass (SOG) material acts as positive-type electron beam resist, and 200 nm line pattern was obtained using 100 nm beam diameter electron beam exposure and following buffered HF (BHF) development. Our previous report, (Jpn. J. Appl. Phys., vol.41, p.4304-4306, (2002)), direct etching of SOG by synchrotron radiation (SR) was confirmed, however, etching rate of polymethylmethacrylate (PMMA) was much higher than that of SOG. Therefore, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as PMMA by SR exposure. In this report; etching of PMMA by SR using SOG mask was examined.

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M3 - Conference contribution

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T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

SP - 214

BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

Y2 - 6 November 2002 through 8 November 2002

ER -

Taniguchi J, Takezawa S, Kanda K, Haruyama Y, Matsui S, Miyamoto I. PMMA direct patterning by synchrotron radiation using SOG mask. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 214. 1178620. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178620

PMMA direct patterning by synchrotron radiation using SOG mask

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