TY - JOUR
T1 - Photoluminescence properties of ZnSnP2 single crystals
AU - Miyauchi, Keisuke
AU - Minemura, Takehiro
AU - Nakatani, Keigo
AU - Nakanishi, Hisayuki
AU - Sugiyama, Mutsumi
AU - Shirakata, Sho
PY - 2009
Y1 - 2009
N2 - Photoluminescence (PL) spectra of bulk ZnSnP2 crystals grown by solution growth (SG) and normal freezing (NF) methods are described. The donor-acceptor pair (DAP) transition, which possibly originates from the transition from Sn levels at Zn sites (SnZn) to Zn vacancy (V Zn) levels, is observed in the crystals grown by the SG method. The PL spectra of the crystals grown by the NF method exhibit free-to-bound transitions. Ionization energies of the SnZn and VZn levels are estimated to be approximately 110 and 40-50 meV, respectively. These results are the first step toward realizing novel functions of optical devices using ZnSnP2.
AB - Photoluminescence (PL) spectra of bulk ZnSnP2 crystals grown by solution growth (SG) and normal freezing (NF) methods are described. The donor-acceptor pair (DAP) transition, which possibly originates from the transition from Sn levels at Zn sites (SnZn) to Zn vacancy (V Zn) levels, is observed in the crystals grown by the SG method. The PL spectra of the crystals grown by the NF method exhibit free-to-bound transitions. Ionization energies of the SnZn and VZn levels are estimated to be approximately 110 and 40-50 meV, respectively. These results are the first step toward realizing novel functions of optical devices using ZnSnP2.
UR - http://www.scopus.com/inward/record.url?scp=70349431571&partnerID=8YFLogxK
U2 - 10.1002/pssc.200881170
DO - 10.1002/pssc.200881170
M3 - Conference article
AN - SCOPUS:70349431571
SN - 1862-6351
VL - 6
SP - 1116
EP - 1119
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 5
T2 - 16th International Conference on Ternary and Multinary Compounds, ICTMC16
Y2 - 15 September 2008 through 19 September 2008
ER -