TY - GEN
T1 - Pattern defects of nanoimprint in atmospheric conditions
AU - Hiroshima, H.
AU - Komuro, M.
AU - Kasahara, N.
AU - Kurashima, Y.
AU - Taniguchi, Jun
AU - Miyamoto, I.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - A nanoimprint technology is a promising candidate to fabricate sub-50 nm patterns with high-throughput and low cost. Especially, the nanoimprint using photo solidification is suitable for precise patterning because of suppression of pattern placement errors due to thermal expansion and/or strain of mold and wafer generated by high pressure between them. However, when nanoimprint is carried out in air with rather low pressure, a small volume of air remained in concave mold pattern gives rise to pattern defects (called as bubble defects) in the replicated patterns. In this paper, we investigate characteristics of generation of bubble defects in atmospheric conditions' nanoimprint.
AB - A nanoimprint technology is a promising candidate to fabricate sub-50 nm patterns with high-throughput and low cost. Especially, the nanoimprint using photo solidification is suitable for precise patterning because of suppression of pattern placement errors due to thermal expansion and/or strain of mold and wafer generated by high pressure between them. However, when nanoimprint is carried out in air with rather low pressure, a small volume of air remained in concave mold pattern gives rise to pattern defects (called as bubble defects) in the replicated patterns. In this paper, we investigate characteristics of generation of bubble defects in atmospheric conditions' nanoimprint.
UR - http://www.scopus.com/inward/record.url?scp=84960328020&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2002.1178524
DO - 10.1109/IMNC.2002.1178524
M3 - Conference contribution
AN - SCOPUS:84960328020
T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
SP - 22
EP - 23
BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2002
Y2 - 6 November 2002 through 8 November 2002
ER -