@inproceedings{8a364c117e7e4dd68789861ab352d7d4,
title = "Optimizing activation process for strong direct bonding between diamond and Si substrates",
abstract = "We optimized process parameters to form strong bonding between diamond and Si substrates. Our previous study revealed that a diamond (100) substrate cleaned with a mixture of ammonia and hydrogen peroxide solutions can be bonded with a plasma-activated semiconductor substrate. In this study, when an oxygen plasma activation time was optimized, the shear strength of the bonded diamond and Si substrates satisfied a military standard for electronics. We believe that the semiconductor device strongly bonded on the diamond heat spreader can contribute to future high-power and high-frequency devices.",
keywords = "diamond, direct bonding, hydrophilic bonding, plasma activation",
author = "S. Okita and T. Matsumae and Y. Kurashima and H. Takagi and H. Umezawa and M. Hayase",
note = "Publisher Copyright: {\textcopyright} 2023 Japan Institute of Electronics Packaging.; 22nd International Conference on Electronics Packaging, ICEP 2023 ; Conference date: 19-04-2023 Through 22-04-2023",
year = "2023",
doi = "10.23919/ICEP58572.2023.10129745",
language = "English",
series = "2023 International Conference on Electronics Packaging, ICEP 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "261--262",
booktitle = "2023 International Conference on Electronics Packaging, ICEP 2023",
}