抄録
400-nm-thick (Pb,La)(Zr,Ti)O3 (PLZT) films with a composition of Pb:La:Zr:Ti = X:3:65:35 were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates at 700°C by chemical solution deposition using precursor solutions with Pb contents of X = 107, 112, 116, 121 and 126. The PLZT films fabricated from the solutions of X = 107 and 112 had bimodal structure and included pyrochlore phase. The pyrochlore region decreased with increasing the Pb content, and single perovskite phase PLZT films with well-filled structure were obtained at the Pb contents of 121 and 126. From these results, we concluded that the Pb-content of X = 121 (125 mol% relative to a stoichiometric value) was optimum for the fabrication of PLZT films for optical applications. This optimization slightly improved electrical and electrooptic properties of the PLZT films, and finally the PLZT(121/3/65/35) film showed the Pockels coefficient of 84 pm/V.
本文言語 | English |
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ページ(範囲) | 223-227 |
ページ数 | 5 |
ジャーナル | Ferroelectrics |
巻 | 357 |
号 | 1 PART 3 |
DOI | |
出版ステータス | Published - 2007 |
イベント | 5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan 継続期間: 3 9月 2006 → 7 9月 2006 |