TY - GEN
T1 - Lifetime prolongation of release agent on antireflection structure molds by means of partial-filling ultraviolet nanoimprint lithography
AU - Abu TalipaYusof, Nurhafizah Binti
AU - Hayashi, Tatsuya
AU - Taniguchi, Jun
AU - Hiwasa, Shin
N1 - Publisher Copyright:
© 2015 The Japan Institute of Electronics Packaging.
PY - 2015/5/20
Y1 - 2015/5/20
N2 - Release agent becomes an imperative element in ultraviolet nanoimprint lithography (UV-NIL) for preventing the adhesive resin from adhering to the surface of antireflection structures (ARS) mold. However, complete filling the resin of a high-aspect-ratio ARS mold during UV-NIL generates a strong release force (RF) that deteriorates the release agent and shortens the lifetime of the ARS mold. In this paper, we proposed a technique of partial-filling UV-NIL in order to reduce the RF and consequently, prolong the lifetime of the release agent on ARS mold. The release and optical properties of the ARS were measured to determine the lifetime of the release agent on the mold, and complete-filling UV-NIL was also executed for comparison. By means of partial-filling UV-NIL, we successfully fabricated ARS films with excellent performance up to 75th imprint compared to complete-filling UV-NIL up to the 40th imprint.
AB - Release agent becomes an imperative element in ultraviolet nanoimprint lithography (UV-NIL) for preventing the adhesive resin from adhering to the surface of antireflection structures (ARS) mold. However, complete filling the resin of a high-aspect-ratio ARS mold during UV-NIL generates a strong release force (RF) that deteriorates the release agent and shortens the lifetime of the ARS mold. In this paper, we proposed a technique of partial-filling UV-NIL in order to reduce the RF and consequently, prolong the lifetime of the release agent on ARS mold. The release and optical properties of the ARS were measured to determine the lifetime of the release agent on the mold, and complete-filling UV-NIL was also executed for comparison. By means of partial-filling UV-NIL, we successfully fabricated ARS films with excellent performance up to 75th imprint compared to complete-filling UV-NIL up to the 40th imprint.
KW - contact angle
KW - lifetime
KW - partial filling
KW - release force
KW - ultraviolet nanoimprint (NIL)
UR - http://www.scopus.com/inward/record.url?scp=84936145184&partnerID=8YFLogxK
U2 - 10.1109/ICEP-IAAC.2015.7111048
DO - 10.1109/ICEP-IAAC.2015.7111048
M3 - Conference contribution
AN - SCOPUS:84936145184
T3 - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
SP - 418
EP - 421
BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Y2 - 14 April 2015 through 17 April 2015
ER -