High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation)-MESFETs

Atsushi Kanda, Satoshi Kodama, Tomofumi Furuta, Takumi Nittono, Tadao Ishibashi, Masahiro Muraguchi

研究成果: Paper

2 引用 (Scopus)

抜粋

19 GHz-band GaAs MESFET switch ICs have been demonstrated, intended for use in high-speed wireless LAN systems. The FET channel is fabricated on a SiO2 insulator in order to reduce parasitic FET drain-source capacitance (Cds) which acts as off-state capacitance (Coff) in switches. The LOXI (Layered-Oxide-Isolation)-MESFET has enough DC and RF performance for use as an active device. On-state FET resistance (Ron) remains the same as that of conventional MESFETs while Coff is reduced. This allows the use of larger gate-width switch FETs, which yield low insertion loss. The measured simple SPST (single-pole, single-throw) switch has low insertion loss of 0.5 dB and high isolation of 23 dB at 19 GHz. The measured simple SPDT (single-pole, double-throw) switch also has good characteristics, 0.8 dB insertion loss and 17 dB isolation at 19 GHz.

元の言語English
ページ62-65
ページ数4
出版物ステータスPublished - 1 12 1997
イベントProceedings of the 1997 19th Annual GaAs IC Symposium - Anaheim, CA, USA
継続期間: 12 10 199715 10 1997

Conference

ConferenceProceedings of the 1997 19th Annual GaAs IC Symposium
Anaheim, CA, USA
期間12/10/9715/10/97

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これを引用

Kanda, A., Kodama, S., Furuta, T., Nittono, T., Ishibashi, T., & Muraguchi, M. (1997). High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation)-MESFETs. 62-65. 論文発表場所 Proceedings of the 1997 19th Annual GaAs IC Symposium, Anaheim, CA, USA, .