19 GHz-band GaAs MESFET switch ICs have been demonstrated, intended for use in high-speed wireless LAN systems. The FET channel is fabricated on a SiO2 insulator in order to reduce parasitic FET drain-source capacitance (Cds) which acts as off-state capacitance (Coff) in switches. The LOXI (Layered-Oxide-Isolation)-MESFET has enough DC and RF performance for use as an active device. On-state FET resistance (Ron) remains the same as that of conventional MESFETs while Coff is reduced. This allows the use of larger gate-width switch FETs, which yield low insertion loss. The measured simple SPST (single-pole, single-throw) switch has low insertion loss of 0.5 dB and high isolation of 23 dB at 19 GHz. The measured simple SPDT (single-pole, double-throw) switch also has good characteristics, 0.8 dB insertion loss and 17 dB isolation at 19 GHz.
|出版物ステータス||Published - 1 12 1997|
|イベント||Proceedings of the 1997 19th Annual GaAs IC Symposium - Anaheim, CA, USA|
継続期間: 12 10 1997 → 15 10 1997
|Conference||Proceedings of the 1997 19th Annual GaAs IC Symposium|
|市||Anaheim, CA, USA|
|期間||12/10/97 → 15/10/97|