Heterogeneous GaN-Si integration via plasma activation direct bonding

Takashi Matsumae, Mu Fengwen, Shoya Fukumoto, Masanori Hayase, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi, Tadatomo Suga

研究成果: Article査読

抄録

Direct bonding of GaN and Si substrates at 125 °C under atmospheric conditions was investigated by different Plasma activation bonding (PAB) methods. The substrates activated by a sequential oxygen and nitrogen plasma were strongly bonded so that the fracture within GaN bulk occurred during strength measurement. A ∼3-nm-thick amorphous layer consisting of GaOx and SiOx was confirmed at the bonding interface. This plasma-assisted low-temperature direct bonding may shed light on the advanced electronic devices using the GaN-Si heterostructure.

本文言語English
論文番号156933
ジャーナルJournal of Alloys and Compounds
852
DOI
出版ステータスPublished - 25 1 2021

フィンガープリント 「Heterogeneous GaN-Si integration via plasma activation direct bonding」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル