Heterogeneous GaN-Si integration via plasma activation direct bonding

Takashi Matsumae, Mu Fengwen, Shoya Fukumoto, Masanori Hayase, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi, Tadatomo Suga

研究成果: Article査読


Direct bonding of GaN and Si substrates at 125 °C under atmospheric conditions was investigated by different Plasma activation bonding (PAB) methods. The substrates activated by a sequential oxygen and nitrogen plasma were strongly bonded so that the fracture within GaN bulk occurred during strength measurement. A ∼3-nm-thick amorphous layer consisting of GaOx and SiOx was confirmed at the bonding interface. This plasma-assisted low-temperature direct bonding may shed light on the advanced electronic devices using the GaN-Si heterostructure.

ジャーナルJournal of Alloys and Compounds
出版ステータスPublished - 25 1 2021

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