TY - GEN
T1 - Growth and properties of epitaxial Cu(In, Ga)Se2 thin films deposited by the three-stage process for solar cells
AU - Yamagami, Takeru
AU - Ando, Yuta
AU - Khatri, Ishwor
AU - Sugiyama, Mutsumi
AU - Nakada, Tokio
N1 - Funding Information:
This work was supported by New Energy and Industrial Technology Development Organization (NEDO). The authors would like to express sincere appreciation to Dr. T. Ichihashi and Prof. Y. Idemoto for their help with TEM analysis.
Publisher Copyright:
©2017 IEEE.
PY - 2017
Y1 - 2017
N2 - Epitaxial CIGS thin films were deposited by the modified three-stage process on epitaxially-grown Mo {110}/sapphire {0001} substrates. The crystallographic properties were investigated by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The 2 m-thick epitaxial CIGS thin films showed high flatness and a few grain boundaries with voids at the CIGS/MoSe2 interface. The CIGS {112} plane grew parallel to hexagonal MoSe2 {0001}/Mo {110}/sapphire {0001}. The misfit dislocations were not found in the CIGS or MoSe2 films. Time resolved photo-luminescence (TR-PL) measurements revealed that the PL lifetime of the epitaxial CIGS thin films did not show a significant difference before or after the CBD-CdS process. This result contrasts clearly to polycrystalline CIGS thin films grown on soda-lime glass substrates.
AB - Epitaxial CIGS thin films were deposited by the modified three-stage process on epitaxially-grown Mo {110}/sapphire {0001} substrates. The crystallographic properties were investigated by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The 2 m-thick epitaxial CIGS thin films showed high flatness and a few grain boundaries with voids at the CIGS/MoSe2 interface. The CIGS {112} plane grew parallel to hexagonal MoSe2 {0001}/Mo {110}/sapphire {0001}. The misfit dislocations were not found in the CIGS or MoSe2 films. Time resolved photo-luminescence (TR-PL) measurements revealed that the PL lifetime of the epitaxial CIGS thin films did not show a significant difference before or after the CBD-CdS process. This result contrasts clearly to polycrystalline CIGS thin films grown on soda-lime glass substrates.
UR - http://www.scopus.com/inward/record.url?scp=85067815503&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2017.8521476
DO - 10.1109/pvsc.2017.8521476
M3 - Conference contribution
AN - SCOPUS:85067815503
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 1921
EP - 1943
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -