TY - JOUR
T1 - Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering
AU - Masaki, Shingo
AU - Nakanishi, Hisayuki
AU - Sugiyama, Mutsumi
AU - Chichibu, Shigefusa F.
PY - 2009
Y1 - 2009
N2 - Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.
AB - Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.
UR - http://www.scopus.com/inward/record.url?scp=70349428789&partnerID=8YFLogxK
U2 - 10.1002/pssc.200881168
DO - 10.1002/pssc.200881168
M3 - Conference article
AN - SCOPUS:70349428789
SN - 1862-6351
VL - 6
SP - 1109
EP - 1111
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 5
T2 - 16th International Conference on Ternary and Multinary Compounds, ICTMC16
Y2 - 15 September 2008 through 19 September 2008
ER -