Finding of a new organic semiconductor with an extremely narrow gap

Naoya Tajima; Masafumi Tamura; Yutaka Nishio; Koji Kajita; Yasuhiro Iye

doi:10.1016/S0379-6779(98)00884-4

Finding of a new organic semiconductor with an extremely narrow gap

Naoya Tajima, Masafumi Tamura, Yutaka Nishio, Koji Kajita, Yasuhiro Iye

先端物理学科

研究成果: Conference article › 査読

2 被引用数 (Scopus)

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We found that α-(BEDT-TTF)₂I₃ placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap (gap energy might be as low as several kelvins). The Hall coefficient which varies 6 orders of magnitude between 300K and 1K, and a temperature independent conductivity are key properties to understand this material. No such organic conductors nor inorganic conductors are ever known. Anomalous magnetotransport phenomena were observed at low temperatures.

本文言語	English
ページ（範囲）	1958-1959
ページ数	2
ジャーナル	Synthetic Metals
巻	103
号	1-3
DOI	https://doi.org/10.1016/S0379-6779(98)00884-4
出版ステータス	Published - 24 6月 1999
イベント	Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier 継続期間: 12 7月 1998 → 18 7月 1998

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abstract = "We found that α-(BEDT-TTF)2I3 placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap (gap energy might be as low as several kelvins). The Hall coefficient which varies 6 orders of magnitude between 300K and 1K, and a temperature independent conductivity are key properties to understand this material. No such organic conductors nor inorganic conductors are ever known. Anomalous magnetotransport phenomena were observed at low temperatures.",

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AU - Tajima, Naoya

AU - Tamura, Masafumi

AU - Nishio, Yutaka

AU - Kajita, Koji

AU - Iye, Yasuhiro

PY - 1999/6/24

Y1 - 1999/6/24

N2 - We found that α-(BEDT-TTF)2I3 placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap (gap energy might be as low as several kelvins). The Hall coefficient which varies 6 orders of magnitude between 300K and 1K, and a temperature independent conductivity are key properties to understand this material. No such organic conductors nor inorganic conductors are ever known. Anomalous magnetotransport phenomena were observed at low temperatures.

AB - We found that α-(BEDT-TTF)2I3 placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap (gap energy might be as low as several kelvins). The Hall coefficient which varies 6 orders of magnitude between 300K and 1K, and a temperature independent conductivity are key properties to understand this material. No such organic conductors nor inorganic conductors are ever known. Anomalous magnetotransport phenomena were observed at low temperatures.

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U2 - 10.1016/S0379-6779(98)00884-4

DO - 10.1016/S0379-6779(98)00884-4

M3 - Conference article

AN - SCOPUS:0033138237

SN - 0379-6779

VL - 103

SP - 1958

EP - 1959

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98)

Y2 - 12 July 1998 through 18 July 1998

ER -

Finding of a new organic semiconductor with an extremely narrow gap

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