TY - GEN
T1 - Fabrication of three-dimensional HSQ resist structure using electron beam lithography
AU - Matsubara, Yasushi
AU - Taniguchi, Jun
AU - Miyamoto, Iwao
PY - 2005/1/1
Y1 - 2005/1/1
N2 - Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In our previous work, we investigated EBL characteristics of spin-on-glass (SOG), which acts as a positive resist. And we were fabricated nanometer-order SOG resist structure whose depth is controlled by changing the electron beam (EB) acceleration voltage [1]. In this paper; we were used hydrogen silsesquioxane (HSQ), which acts as a negative resist [2]. And we were fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage. HSQ was spin coating on silicon substrate. After spin coating to a thickness of 350 nm and baking at 180°C. The resist film was exposed using the ERA-8800FE SEM (ELIONIX) which customized to exposure system. The exposure acceleration voltage was 1kV and patterning is line & space and dose is 0.27 mC/cm2. In addition, the exposure acceleration voltage was 10kV and patterning is vertical line & space for 1kV patterning and dose is 0.36 mC/cm2, too. The film was then developed in a 1 to 5% aqueous solution of tetramethyl ammonium hydroxide (TMAH) and rinsed with isopropyl alcohol (IPA). Figure 1 shows schematic diagram of the experiment. After development, three-dimensional HSQ resist structure was fabricated. Figure 2 shows vertical line & space of HSQ patterns after development. Linewidth of HSQ patterns was 200 nm. And figure 3 shows free standing and three-dimensional HSQ structures viewed from 75°. Thickness of HSQ patterns was about 100 nm and 1800nm length. HSQ patterns whose thickness is 100 nm is correspond to depth of SOG when EB acceleration voltage was 1kV. Therefore our study of SOG serves as a useful reference for study of HSQ. From this experiment, following conclusions are obtained: (1) HSQ can be used as negative tone resist at 0.27 to 0.36 mC/cm2 with 1 to 10 keV electron beam. (2) Thickness of HSQ after EB irradiation (1-10keV) and development was 350 nm. (3) Free standing and three-dimensional HSQ structures of 200 nm width, 100 nm thickness and 1800 nm length were successfully obtained.
AB - Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In our previous work, we investigated EBL characteristics of spin-on-glass (SOG), which acts as a positive resist. And we were fabricated nanometer-order SOG resist structure whose depth is controlled by changing the electron beam (EB) acceleration voltage [1]. In this paper; we were used hydrogen silsesquioxane (HSQ), which acts as a negative resist [2]. And we were fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage. HSQ was spin coating on silicon substrate. After spin coating to a thickness of 350 nm and baking at 180°C. The resist film was exposed using the ERA-8800FE SEM (ELIONIX) which customized to exposure system. The exposure acceleration voltage was 1kV and patterning is line & space and dose is 0.27 mC/cm2. In addition, the exposure acceleration voltage was 10kV and patterning is vertical line & space for 1kV patterning and dose is 0.36 mC/cm2, too. The film was then developed in a 1 to 5% aqueous solution of tetramethyl ammonium hydroxide (TMAH) and rinsed with isopropyl alcohol (IPA). Figure 1 shows schematic diagram of the experiment. After development, three-dimensional HSQ resist structure was fabricated. Figure 2 shows vertical line & space of HSQ patterns after development. Linewidth of HSQ patterns was 200 nm. And figure 3 shows free standing and three-dimensional HSQ structures viewed from 75°. Thickness of HSQ patterns was about 100 nm and 1800nm length. HSQ patterns whose thickness is 100 nm is correspond to depth of SOG when EB acceleration voltage was 1kV. Therefore our study of SOG serves as a useful reference for study of HSQ. From this experiment, following conclusions are obtained: (1) HSQ can be used as negative tone resist at 0.27 to 0.36 mC/cm2 with 1 to 10 keV electron beam. (2) Thickness of HSQ after EB irradiation (1-10keV) and development was 350 nm. (3) Free standing and three-dimensional HSQ structures of 200 nm width, 100 nm thickness and 1800 nm length were successfully obtained.
KW - Electron beam lithography
KW - HSQ
KW - Three-dimensional structure
UR - http://www.scopus.com/inward/record.url?scp=33847209999&partnerID=8YFLogxK
U2 - 10.1109/imnc.2005.203777
DO - 10.1109/imnc.2005.203777
M3 - Conference contribution
AN - SCOPUS:33847209999
SN - 4990247221
SN - 9784990247225
T3 - Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
SP - 140
EP - 141
BT - Digest of Papers - Microprocesses and Nanotechnology 2005
PB - IEEE Computer Society
T2 - 2005 International Microprocesses and Nanotechnology Conference
Y2 - 25 October 2005 through 28 October 2005
ER -