Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Torii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.1343504

Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura

電気電子情報工学科

研究成果: Comment/debate

3 被引用数 (Scopus)

本文言語	English
ページ（範囲）	679
ページ数	1
ジャーナル	Applied Physics Letters
巻	78
号	5
DOI	https://doi.org/10.1063/1.1343504
出版ステータス	Published - 29 1月 2001

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10.1063/1.1343504

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Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Torii, K., Deguchi, T., Sota, T., & Nakamura, S. (2001). Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). Applied Physics Letters, 78(5), 679. https://doi.org/10.1063/1.1343504

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Chichibu, SF, Wada, K, Müllhäuser, J, Brandt, O, Ploog, KH, Mizutani, T, Setoguchi, A, Nakai, R, Sugiyama, M, Nakanishi, H, Torii, K, Deguchi, T, Sota, T & Nakamura, S 2001, 'Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))', Applied Physics Letters, vol. 78, no. 5, pp. 679. https://doi.org/10.1063/1.1343504

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AU - Wada, K.

AU - Müllhäuser, J.

AU - Brandt, O.

AU - Ploog, K. H.

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AU - Nakai, R.

AU - Sugiyama, M.

AU - Nakanishi, H.

AU - Torii, K.

AU - Deguchi, T.

AU - Sota, T.

AU - Nakamura, S.

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