TY - JOUR
T1 - Epitaxial Growth of C60 on Rubrene Single Crystals for a Highly Ordered Organic Donor/Acceptor Interface
AU - Mitsuta, Hiroki
AU - Miyadera, Tetsuhiko
AU - Ohashi, Noboru
AU - Zhou, Ying
AU - Taima, Tetsuya
AU - Koganezawa, Tomoyuki
AU - Yoshida, Yuji
AU - Tamura, Masafumi
N1 - Funding Information:
This work was supported by New Energy and Industrial Technology Development Organization (NEDO) of Japan and JSPS KAKENHI (grant nos. JP16H05978 and JP15H03885). The GIWAXS measurement was performed at SPring-8 BL46XU with the approval of the Japan Synchrotron Radiation Research Institute (JASRI, proposal nos. 2016A1514 and 2016B1861).
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/9/6
Y1 - 2017/9/6
N2 - The highly ordered epitaxial growth of C60 films on rubrene single crystals was demonstrated. The C60 crystals growth commensurate with rubrene (001) surface lattice was confirmed by reflection high energy electron diffraction and X-ray diffraction and grazing incident wide-angle X-ray scattering. Depending on growth conditions, several surface morphologies (rounded, hexagonal, and triangular grains) of C60 grains were observed at the initial growth process. Large grains with layer-by-layer step and terrace structure of C60 were observed at the terrace region of rubrene (001) surface. The growth of high-crystallinity C60 films was achieved at high substrate temperature and slow deposition rate. Long migration length on the substrate which was given by enough substrate temperature enabled the formation of large single crystalline domains.
AB - The highly ordered epitaxial growth of C60 films on rubrene single crystals was demonstrated. The C60 crystals growth commensurate with rubrene (001) surface lattice was confirmed by reflection high energy electron diffraction and X-ray diffraction and grazing incident wide-angle X-ray scattering. Depending on growth conditions, several surface morphologies (rounded, hexagonal, and triangular grains) of C60 grains were observed at the initial growth process. Large grains with layer-by-layer step and terrace structure of C60 were observed at the terrace region of rubrene (001) surface. The growth of high-crystallinity C60 films was achieved at high substrate temperature and slow deposition rate. Long migration length on the substrate which was given by enough substrate temperature enabled the formation of large single crystalline domains.
UR - http://www.scopus.com/inward/record.url?scp=85028940927&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.7b00467
DO - 10.1021/acs.cgd.7b00467
M3 - Article
AN - SCOPUS:85028940927
SN - 1528-7483
VL - 17
SP - 4622
EP - 4627
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 9
ER -