Electron irradiation resistance of NiO/ZnO visible-light-transparent solar cells

In this study, the degradation of photovoltaic properties of NiO/ZnO visible-light-transparent solar cells after 2 MeV electron irradiation is investigated to explore the possibility of space applications. No significant degradation is observed after 2 MeV electron irradiation at the fluence of 1 × 1017 cm-2. The electrical performance of NiO/ZnO solar cells exhibited a higher electron irradiation resistance than that of polycrystalline Si or Cu(In,Ga)Se2 solar cells. The high electron irradiation resistance of NiO/ZnO solar cells is thought to be due to large threshold displacement energies of NiO and ZnO, and also to the recovery from radiation-induced damage at room temperature. These results represent the first step toward the realization of the practical application of NiO/ZnO solar cells in space.