Effects of active hydrogen on atomic layer epitaxy of GaAs

T. Meguro, H. Isshiki, J. S. Lee, S. Iwai, Y. Aoyagi

研究成果: Article査読

抄録

Atomic layer epitaxy of GaAs employing thermally activated hydrogen molecules is reported. It is found that hydrogen molecules thermally activated in a high-temperature cell reduce the ALE temperature, while the activation energy of formation of the methyl-Ga surface from the As surface does not change. On the other hand, the activation energy of formation of the As surface from the methyl-Ga surface remarkably decreases in the active hydrogen flow, indicating that AsH 3 molecules dissociate into AsH x (x = 1 or 2) in the vapor phase.

本文言語English
ページ(範囲)118-121
ページ数4
ジャーナルApplied Surface Science
112
DOI
出版ステータスPublished - 3月 1997

フィンガープリント

「Effects of active hydrogen on atomic layer epitaxy of GaAs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル