TY - JOUR
T1 - Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application
AU - Magdy, Wafaa
AU - Kanai, Ayaka
AU - Mahmoud, F. A.
AU - El Shenawy, E. T.
AU - Khairy, S. A.
AU - Hassan, H. H.
AU - Sugiyama, Mutsumi
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics
PY - 2020/10/1
Y1 - 2020/10/1
N2 - Ternary compound Cu2SnS3 (CTS) thin films were synthesized using two simple and non-vacuum processes: chemical spray pyrolysis and rapid thermal annealing (RTA). The crystal quality of CTS films improved and the band tailing, shown in Tauc's plot, tended to vanish after annealing in a nitrogen atmosphere using RTA. Although ethanol was used as a solvent in the spray pyrolysis, the CTS film was not contaminated by carbon and oxygen. The bandgap of CTS was changed via sulfurization. The optimization of the RTA process affected the composition of the CTS thin films, modifying material defects, and improving the crystal quality. These results represent the initial step toward the practical application of CTS solar cells using an inexpensive fabrication process.
AB - Ternary compound Cu2SnS3 (CTS) thin films were synthesized using two simple and non-vacuum processes: chemical spray pyrolysis and rapid thermal annealing (RTA). The crystal quality of CTS films improved and the band tailing, shown in Tauc's plot, tended to vanish after annealing in a nitrogen atmosphere using RTA. Although ethanol was used as a solvent in the spray pyrolysis, the CTS film was not contaminated by carbon and oxygen. The bandgap of CTS was changed via sulfurization. The optimization of the RTA process affected the composition of the CTS thin films, modifying material defects, and improving the crystal quality. These results represent the initial step toward the practical application of CTS solar cells using an inexpensive fabrication process.
UR - http://www.scopus.com/inward/record.url?scp=85092503578&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/abb7f1
DO - 10.35848/1347-4065/abb7f1
M3 - Article
AN - SCOPUS:85092503578
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 10
M1 - abb7f1
ER -