Deep platinum deposition on medium and highly doped N-type porous silicon by immersion plating

J. G.A. Brito-Neto, S. Araki, M. Hayase

研究成果: Conference contribution査読

抄録

Porous platinum layers were synthesized on highly doped n-type porous silicon by immersion plating in HF-containing hexachloroplatinate solutions. Scanning electron microscopy showed that the deposits attained up to 8 μm depth. The achieved platinum deposits have a random pore structure whereas the original porous silicon substrates show an organized honeycomb-like parallel pore array. Electron probe microanalysis measurements showed that the deposits have very good in-depth homogeneity, indicating also that almost all silicon originally presented was etched away by platinum. The electrochemically active surface area of the platinum deposits was determined to be on the order of 80 m2/cm3 by cyclic voltammetry. copyright The Electrochemical Society.

本文言語English
ホスト出版物のタイトルElectrochemical Processing in ULSI and MEMS 2
出版社Electrochemical Society Inc.
ページ69-74
ページ数6
6
ISBN(印刷版)9781566775175
DOI
出版ステータスPublished - 2006
イベント209th ECS Meeting - Denver, CO, United States
継続期間: 7 5月 200611 5月 2006

出版物シリーズ

名前ECS Transactions
番号6
2
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

Conference209th ECS Meeting
国/地域United States
CityDenver, CO
Period7/05/0611/05/06

フィンガープリント

「Deep platinum deposition on medium and highly doped N-type porous silicon by immersion plating」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル