TY - GEN
T1 - Crystal Orientation Dependence of Low-Temperature Bonding Using Germanium and Diamond Substrates
AU - Minowa, Yuki
AU - Matsumae, Takashi
AU - Kurashima, Yuichi
AU - Hayase, Masanori
AU - Takagi, Hideki
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Bonding formation is possibly affected by crystal orientations, which are deeply related to surface reaction. This study compared the crystal orientation dependence on the bonding strength using Ge and diamond substrates. The bonding of the Ge (100) and (111) surfaces is similar; however, that of diamond (100) and (111) surfaces significantly differs. Understanding the relationship between crystal orientation and bonding formation can contribute to the design of next-generation semiconductors.
AB - Bonding formation is possibly affected by crystal orientations, which are deeply related to surface reaction. This study compared the crystal orientation dependence on the bonding strength using Ge and diamond substrates. The bonding of the Ge (100) and (111) surfaces is similar; however, that of diamond (100) and (111) surfaces significantly differs. Understanding the relationship between crystal orientation and bonding formation can contribute to the design of next-generation semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=85215012656&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D64053.2024.10774102
DO - 10.1109/LTB-3D64053.2024.10774102
M3 - Conference contribution
AN - SCOPUS:85215012656
T3 - 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
BT - 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
Y2 - 30 October 2024 through 1 November 2024
ER -