Complexing Agent-Dependent Properties of Chemically Deposited Tin Antimony Sulphide Thin Films for Use in Sustainable Energy Devices

Patrick Akata Nwofe, Mutsumi Sugiyama

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Complexing agents are important in the control of chemical kinetics. Thin films of tin antimony sulphide (Sn2Sb2S5) were deposited on glass substrates and the effect of different complexing agents [tri-sodium citrate (Na3C6H5O7) and tartaric acid (C4H6O6)] on their properties were investigated. X-ray diffractometry studies indicate that the films crystallized in an orthorhombic structure. Films grown with Na3C6H5O7 exhibited increased texturing and higher crystallite size (16.6–22.1 nm), while that of C4H6O6 was between 16.80 and 20.0 nm. Energy dispersive spectroscopy studies reveal that the antimony/sulfur ratio increased with an increase in the tin content in the former and decreased with an increase in the tin content in the latter. X-ray photoelectron spectroscopy studies confirmed the formation of Sn2Sb2S5 films. Scanning electron microscopy analysis shows morphological evolution from seed-like to block-like structures in Na3C6H5O7and a seed-like structure in the C4H6O6 environments. Optical spectroscopy results indicated that the films possess optical absorption coefficient (α) > 104 cm-1and a direct energy band gap that exhibited the classic Burstein-Moss shift. The energy band gap and the processing parameters fit into a quadratic model with high values of R2. The electrical properties from Hall effect studies give typical semiconductor properties of Sn2Sb2S5 in a range suitable for use in sustainable energy devices.

本文言語English
ページ(範囲)1148-1162
ページ数15
ジャーナルJournal of Electronic Materials
51
3
DOI
出版ステータスPublished - 3月 2022

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