Beam assisted layer-by-layer processes and the mechanism in III-V compounds

Yoshinobu Aoyagi, Takashi Meguro, Sohachi Iwai

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

GaAs and GaAlAs thin layers were grown by Ar ion laser wavelength dependence of the growth rate/cycle of GaAs under laser ALE. The growth rate as a function of the number of pulses of trimethyl gallium and the laser between the AsH3 gas supply. The procedure for digital etching beam layer-by-layer processes will become important techniques for future quantum devices and artificially designed electronic materials.

本文言語English
ページ(範囲)55-65
ページ数11
ジャーナルActa Polytechnica Scandinavica, Chemical Technology and Metallurgy Series
195
出版ステータスPublished - 1990
イベントFirst International Symposium on Atomic Layer Epitaxy - Espoo, Finl
継続期間: 11 6月 199013 6月 1990

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