Analysis of minority carrier lifetime for InAlAs/InGaAs high electron mobility transistors by using 1.55-μm femto-second pulse laser
Hirohisa Taguchi, Chihiro Sano, Hiroaki Murakami, Masashi Oura, Tsutomu Iida, Yoshifumi Takanashi
研究成果: Conference article › 査読
5
被引用数
(Scopus)