TY - GEN
T1 - An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process
AU - Suda, Ikuo
AU - Kishida, Ryo
AU - Kobayashi, Kazutoshi
N1 - Funding Information:
We thank Dr. M. Igarashi, Dr. S. Kumashiro, Mr. H. Sakamoto and Dr. M. Yabuuchi of Renesas Electronics for valuable comments. The chip for this work was fabricated by Renesas Electronics and designed by utilizing the EDA systems supported by d.lab, the University of Tokyo in collaboration with Synopsys Inc., Cadence Design System, and Mentor Graphics Inc.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.
AB - We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.
KW - bias temperature instability (BTI)
KW - forward body bias (FBB)
KW - ring oscillator (RO)
UR - http://www.scopus.com/inward/record.url?scp=85130713936&partnerID=8YFLogxK
U2 - 10.1109/IRPS48227.2022.9764544
DO - 10.1109/IRPS48227.2022.9764544
M3 - Conference contribution
AN - SCOPUS:85130713936
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - P41-P45
BT - 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Reliability Physics Symposium, IRPS 2022
Y2 - 27 March 2022 through 31 March 2022
ER -