An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process

Ikuo Suda, Ryo Kishida, Kazutoshi Kobayashi

研究成果: Conference contribution査読

抄録

We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.

本文言語English
ホスト出版物のタイトル2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページP41-P45
ISBN(電子版)9781665479509
DOI
出版ステータスPublished - 2022
イベント2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
継続期間: 27 3月 202231 3月 2022

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2022-March
ISSN(印刷版)1541-7026

Conference

Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
国/地域United States
CityDallas
Period27/03/2231/03/22

フィンガープリント

「An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル