TY - GEN
T1 - 3D imprint technology using SOG mold
AU - Taniguchi, J.
AU - Iida, M.
AU - Takezawa, S.
AU - Kurashima, Y.
AU - Miyamoto, I.
AU - Komuro, M.
AU - Hiroshima, H.
AU - Matsui, S.
AU - Sakai, N.
AU - Tada, K.
N1 - Publisher Copyright:
© 2002 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2002
Y1 - 2002
N2 - Nanoimprint lithography (NIL) provides a major breakthrough in nanopatterning because it produces nanometer features over a large area with high throughput and low cost. There are a lot of NIL studies, however, all of them are concerned with two dimensional pattern transfers. Fine three-dimensional (3D) fabrication process is now required and studied for various applications such as photonic crystals. In this work, we found out that Spin-On-Glass (SOG) behaves a positive-type-electron-beam (EB) resist using buffered HIP (BHF) development.
AB - Nanoimprint lithography (NIL) provides a major breakthrough in nanopatterning because it produces nanometer features over a large area with high throughput and low cost. There are a lot of NIL studies, however, all of them are concerned with two dimensional pattern transfers. Fine three-dimensional (3D) fabrication process is now required and studied for various applications such as photonic crystals. In this work, we found out that Spin-On-Glass (SOG) behaves a positive-type-electron-beam (EB) resist using buffered HIP (BHF) development.
UR - http://www.scopus.com/inward/record.url?scp=84960428485&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2002.1178597
DO - 10.1109/IMNC.2002.1178597
M3 - Conference contribution
AN - SCOPUS:84960428485
T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
SP - 168
EP - 169
BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2002
Y2 - 6 November 2002 through 8 November 2002
ER -