Unoccupied electronic state of lightly La-doped SrTiO3 observed by inverse-photoemission spectroscopy

Daisuke Baba, Tohru Higuchi, Hirofumi Kakemoto, Yoshinori Tokura, Shik Shin, Takeyo Tsukamoto

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3 Citations (Scopus)

Abstract

The unoccupied electronic state of lightly La3+-doped SrTiO3 has been studied by inverse-photoemission spectroscopy (IPES). The IPES spectra exhibit two features, which correspond to t2g- and eg-subbands of the Ti 3d state. The peak positions of t2g- and eg-subbands are in good agreement with the standard band calculation. The intensity of the t2g-subband of the Ti 3d-induced conduction band decreases with increasing La3+ dopant concentration. This finding is direct evidence that the doped electrons enter the bottom of the Ti 3d-induced conduction band.

Original languageEnglish
Pages (from-to)L837-L839
JournalJapanese Journal of Applied Physics
Volume42
Issue number7 B
DOIs
Publication statusPublished - 15 Jul 2003

Keywords

  • Band calculation
  • Electronic structure
  • Inverse photoemission spectroscopy (IPES)
  • La-doped SrTiO (LaSr TiO)
  • Rigid-band model
  • Unoccupied state

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