Abstract
The unoccupied electronic state of lightly La3+-doped SrTiO3 has been studied by inverse-photoemission spectroscopy (IPES). The IPES spectra exhibit two features, which correspond to t2g- and eg-subbands of the Ti 3d state. The peak positions of t2g- and eg-subbands are in good agreement with the standard band calculation. The intensity of the t2g-subband of the Ti 3d-induced conduction band decreases with increasing La3+ dopant concentration. This finding is direct evidence that the doped electrons enter the bottom of the Ti 3d-induced conduction band.
Original language | English |
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Pages (from-to) | L837-L839 |
Journal | Japanese Journal of Applied Physics |
Volume | 42 |
Issue number | 7 B |
DOIs | |
Publication status | Published - 15 Jul 2003 |
Keywords
- Band calculation
- Electronic structure
- Inverse photoemission spectroscopy (IPES)
- La-doped SrTiO (LaSr TiO)
- Rigid-band model
- Unoccupied state