Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

K. Shinohara, Y. Yamashita, Akira Endo, K. Hikosaka, T. Matsui, T. Mimura, S. Hiyamizu

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74 Citations (Scopus)

Abstract

An excellent cutoff frequency (ft) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (Lg) dependence of electron transit time (τtransit) implied an increased saturation velocity (vs) of 3.6 × 107 cm/s in the developed pseudomorphic HEMTs. This ft is the highest value ever reported for any transistors to date.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number11
DOIs
Publication statusPublished - 1 Nov 2001

Keywords

  • Cutoff frequency
  • Gate length
  • HEMT
  • InGaAs/InAlAs
  • InP
  • Pseudomorphic
  • Saturation velocity
  • Short-channel effect

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    Shinohara, K., Yamashita, Y., Endo, A., Hikosaka, K., Matsui, T., Mimura, T., & Hiyamizu, S. (2001). Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency. IEEE Electron Device Letters, 22(11), 507-509. https://doi.org/10.1109/55.962645