Three dimensional nano fabrication of single crystal silicon by focused ion beam and subsequent wet chemical etching

Noritaka Kawasegi, Noboru Morita, Shigeru Yamada, Noboru Takano, Tatsuo Oyama, Kiwamu Ashida, Jun Taniguchi, Iwao Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study aims to fabricate three dimensional nanostructures of single crystal silicon by focused ion beam (FIB) process and subsequent wet chemical etching. Irradiated area by FIB acts as a mask against KOH solution, and consequently protruding nanostructures having several hundreds of nanometers in height can be fabricated through etch process. In order to control the height of nanostructures, the dependence of the masking effect on FIB irradiating conditions are studied under various parameters. As a result, it is found that the masking effect can be controlled by FIB irradiating conditions such as dose, accelerate voltage and dot pitch. Finally, three dimensional nanostructures can be fabricated based on these results, which indicates a possibility of industrial application as a novel three dimensional nanofabrication process.

Original languageEnglish
Title of host publicationProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress of Machining Technology, ICPMT'2004
EditorsW. Chen, Y. Yamane, R. Fan, A. Ochi
Pages330-335
Number of pages6
Publication statusPublished - 1 Dec 2004
EventProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress Machining Technology, ICPMT'2004 - Suzhou, China
Duration: 8 Dec 200411 Dec 2004

Publication series

NameProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress of Machining Technology, ICPMT'2004

Conference

ConferenceProgress of Machining Technology - Proceedings of the Seventh International Conference on Progress Machining Technology, ICPMT'2004
CountryChina
CitySuzhou
Period8/12/0411/12/04

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Keywords

  • Accelerate Voltage
  • Dose
  • Dot Pitch
  • Focused Ion Beam
  • KOH
  • Single Crystal Silicon
  • Three Dimensional Nanofabrication
  • Wet Chemical Etching

Cite this

Kawasegi, N., Morita, N., Yamada, S., Takano, N., Oyama, T., Ashida, K., ... Miyamoto, I. (2004). Three dimensional nano fabrication of single crystal silicon by focused ion beam and subsequent wet chemical etching. In W. Chen, Y. Yamane, R. Fan, & A. Ochi (Eds.), Progress of Machining Technology - Proceedings of the Seventh International Conference on Progress of Machining Technology, ICPMT'2004 (pp. 330-335). (Progress of Machining Technology - Proceedings of the Seventh International Conference on Progress of Machining Technology, ICPMT'2004).