The influence of water absorbed in grain boundary of a polycrystalline NiO layer on the memory characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

Ryosuke Ogata; Masataka Yoshihara; Naohiro Murayama; Satoru Kishida; Kentaro Kinoshita

doi:10.1557/opl.2014.792

The influence of water absorbed in grain boundary of a polycrystalline NiO layer on the memory characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

Ryosuke Ogata, Masataka Yoshihara, Naohiro Murayama, Satoru Kishida, Kentaro Kinoshita

Department of Applied Physics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H⁺ and OH^-.

Original language	English
Journal	Materials Research Society Symposium Proceedings
Volume	1691
DOIs	https://doi.org/10.1557/opl.2014.792
Publication status	Published - 2014
Event	2014 MRS Spring Meeting - San Francisco, United States Duration: 21 Apr 2014 → 25 Apr 2014

Keywords

memory
thin film
water

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10.1557/opl.2014.792

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title = "The influence of water absorbed in grain boundary of a polycrystalline NiO layer on the memory characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)",

abstract = "We focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.",

keywords = "memory, thin film, water",

author = "Ryosuke Ogata and Masataka Yoshihara and Naohiro Murayama and Satoru Kishida and Kentaro Kinoshita",

note = "Publisher Copyright: Copyright {\textcopyright} Materials Research Society 2014.; 2014 MRS Spring Meeting ; Conference date: 21-04-2014 Through 25-04-2014",

year = "2014",

doi = "10.1557/opl.2014.792",

language = "English",

volume = "1691",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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The influence of water absorbed in grain boundary of a polycrystalline NiO layer on the memory characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM). / Ogata, Ryosuke; Yoshihara, Masataka; Murayama, Naohiro et al.
In: Materials Research Society Symposium Proceedings, Vol. 1691, 2014.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The influence of water absorbed in grain boundary of a polycrystalline NiO layer on the memory characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

AU - Ogata, Ryosuke

AU - Yoshihara, Masataka

AU - Murayama, Naohiro

AU - Kishida, Satoru

AU - Kinoshita, Kentaro

PY - 2014

Y1 - 2014

N2 - We focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

AB - We focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

KW - memory

KW - thin film

KW - water

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U2 - 10.1557/opl.2014.792

DO - 10.1557/opl.2014.792

M3 - Conference article

AN - SCOPUS:84924303445

SN - 0272-9172

VL - 1691

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 2014 MRS Spring Meeting

Y2 - 21 April 2014 through 25 April 2014

ER -

The influence of water absorbed in grain boundary of a polycrystalline NiO layer on the memory characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

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