TY - JOUR
T1 - Temperature Dependent Epitaxial Growth of C60 Overlayers on Single Crystal Pentacene
AU - Nakayama, Yasuo
AU - Tsuruta, Ryohei
AU - Hinderhofer, Alexander
AU - Mizuno, Yuta
AU - Broch, Katharina
AU - Gerlach, Alexander
AU - Koganezawa, Tomoyuki
AU - Hosokai, Takuya
AU - Schreiber, Frank
N1 - Funding Information:
The authors would like to thank Prof. Hisao Ishii (Chiba University) and Dr. Hiroshi Itoh (AIST) for supporting the AFM experiments and analyses, and Heiko Frank (Universität Tübingen) and Valentina Belova (Universität Tübingen) for their help during the XRR experiments. A part of this work was done under the approval of JASRI (Proposal 2015A1685 and 2015B1624 as collaborating proposals with Keysight Technologies) and of the Paul Scherrer Institute (Proposals 20141165 and 20150468). Financial supports from KAKENHI Grant Numbers JP15H05498, JP16K14102, and JP16K17975 of the Japan Society for the Promotion of Science (JSPS) and the Start-up Fund for Young Faculties of Tokyo University of Science are gratefully acknowledged. This work is also partially supported by The Precise Measurement Technology Promotion Foundation, Iketani Science and Technology Foundation, and the DFG.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/6/22
Y1 - 2018/6/22
N2 - Heteroepitaxy of one material onto another molecular single crystal surface is one promising route for resolving questions about formation criteria of molecular heterojunction structures as well as for the development of next-generation organic electronic devices allowing efficient intermolecular charge carrier exchange. In the present work, the in-plane and out-of-plane crystallinity of an epitaxial molecular p–n heterojunction, C60 (acceptor) overlayers formed on the single crystal surface of pentacene (donor), and its evolution, depending on the growth temperature, are systematically elucidated. It is demonstrated that the crystallinity of the C60 on pentacene is dominated by the temperature during the growth rather than the postannealing of the sample. The mean crystallite size in the in-plane directions grows from 50 to 150 nm proportionally to the growth temperature in a range of 125–370 K. The present results suggest that the formation mechanisms of the C60/pentacene heterojunction are kinetically controlled, by diffusion processes at the molecular interface, rather than by the thermal equilibrium conditions.
AB - Heteroepitaxy of one material onto another molecular single crystal surface is one promising route for resolving questions about formation criteria of molecular heterojunction structures as well as for the development of next-generation organic electronic devices allowing efficient intermolecular charge carrier exchange. In the present work, the in-plane and out-of-plane crystallinity of an epitaxial molecular p–n heterojunction, C60 (acceptor) overlayers formed on the single crystal surface of pentacene (donor), and its evolution, depending on the growth temperature, are systematically elucidated. It is demonstrated that the crystallinity of the C60 on pentacene is dominated by the temperature during the growth rather than the postannealing of the sample. The mean crystallite size in the in-plane directions grows from 50 to 150 nm proportionally to the growth temperature in a range of 125–370 K. The present results suggest that the formation mechanisms of the C60/pentacene heterojunction are kinetically controlled, by diffusion processes at the molecular interface, rather than by the thermal equilibrium conditions.
KW - donor–acceptor interface
KW - heteroepitaxy
KW - organic semiconductor
KW - p–n junction
KW - surface diffusion
UR - http://www.scopus.com/inward/record.url?scp=85045838495&partnerID=8YFLogxK
U2 - 10.1002/admi.201800084
DO - 10.1002/admi.201800084
M3 - Article
AN - SCOPUS:85045838495
SN - 2196-7350
VL - 5
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 12
M1 - 1800084
ER -