Temperature-Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n-Type GaN Regrown Ohmic Contacts

Ryota Maeda, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Research output: Contribution to journal › Article › peer-review

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Engineering

Material Science

Chemical Engineering