Systematic gate-controlled reentrant conductance of a superconductor-semiconductor two-dimensional electron gas junction

Etsuko Toyoda, Hideaki Takayanagi, Hayato Nakano

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Abstract

We have investigated the temperature and voltage dependencies of the conductance in a superconductor-semiconductor two-dimensional electron gas (2DEG) junction with a gate. We observed the systematically controlled reentrant behavior of the conductance by using the gate to change diffusion constant of the 2DEG. We confirmed that the correlation energy of the proximity correction to the conductance is proportional to the diffusion constant of the normal part. We also examined the effect of the magnetic field on the reentrance and found that even a small magnetic field changed it drastically.

Original languageEnglish
Pages (from-to)R11653-R11656
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number18
DOIs
Publication statusPublished - 1 Jan 1999

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