Superlattice photocathode with high brightness and long nea-surface lifetime

Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

We have suggested that a small momentum spread of photoelectrons and high quantum efficiency can be obtained concurrently by a photocathode using a semiconductor with a superlattice instead of a bulk. We have begun to search for the suitable semiconductor material of a superlattice photocathode for maintaining the surface with a negative electron affinity state for a long time. We measured quantum efficiency degradation of photocathodes using GaAs and AlGaAs semiconductors with various electron affinities. The AlGaAs semiconductor had a quantum efficiency lifetime of 10 times long compared with the GaAs semiconductor. We found that the AlGaAs semiconductor was the suitable material for the superlattice photocathode with the surface maintaining a negative electron affinity state for a long time.

Original languageEnglish
Title of host publicationSpin Physics
Subtitle of host publication18th International Spin Physics Symposium
EditorsXiaochao Zheng, Yelena Prok, Matt Poelker, Donald G. Crabb, Simonetta Liuti, Donal B. Day
PublisherAmerican Institute of Physics Inc.
Pages1047-1051
Number of pages5
ISBN (Print)9780735406865
DOIs
Publication statusPublished - 4 Aug 2009
Event18th International Spin Physics Symposium 2008 - Charlottesville, United States
Duration: 6 Oct 200811 Oct 2008

Publication series

NameAIP Conference Proceedings
Volume1149
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference18th International Spin Physics Symposium 2008
Country/TerritoryUnited States
CityCharlottesville
Period6/10/0811/10/08

Keywords

  • Electron affinity
  • GaAs semiconductor
  • Long lifetime
  • Photocathode
  • Superlattice

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