Superconducting three-terminal devices using an inas-based two-dimensional electron gas

Hideaki Takayanagi, Tatsushi Akazaki, Junsaku Nitta, Takatomo Enoki

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/lnGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobilityof 73800 cm2/V*s and a high sheet-carrier density of 1.98 x 1012 cm-2 at 4.2 K. The supercurrent flows through the2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gatevoltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normaltransport of the 2DEG.

Original languageEnglish
Pages (from-to)1391-1395
Number of pages5
JournalJapanese Journal of Applied Physics
Volume34
Issue number2S
DOIs
Publication statusPublished - Feb 1995

Keywords

  • Coherence length
  • Heterostructure
  • JOFET
  • Josephson junction
  • Proximity effect
  • Three-terminal operation

Fingerprint Dive into the research topics of 'Superconducting three-terminal devices using an inas-based two-dimensional electron gas'. Together they form a unique fingerprint.

  • Cite this