Study on quantum efficiency of NEA-GaAs with various thermal treatments; the increase in quantum efficiency by the low temperature treatment

K. Hayase, Y. Inagaki, R. Chiba, H. Iijima, T. Meguro

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Evolution of quantum efficiency (QE) is discussed in detail in relation to the history of conditions of negative electron affinity (NEA) activation and thermal pretreatment. An average QE of 0.10 was observed after multiple NEA activation with thermal pretreatment at 550°C, and a high QE of over 0.13 was observed with lower temperature activation (450 °C). Our findings indicated that the increase in QE is caused by the number of electron emission sites due to the difference in the formation and desorption rates of Cs-Ga bonds.

Original languageEnglish
Title of host publicationIPAC 2014
Subtitle of host publicationProceedings of the 5th International Particle Accelerator Conference
PublisherJoint Accelerator Conferences Website (JACoW)
Pages682-684
Number of pages3
ISBN (Electronic)9783954501328
Publication statusPublished - 1 Jul 2014
Event5th International Particle Accelerator Conference, IPAC 2014 - Dresden, Germany
Duration: 15 Jun 201420 Jun 2014

Publication series

NameIPAC 2014: Proceedings of the 5th International Particle Accelerator Conference

Conference

Conference5th International Particle Accelerator Conference, IPAC 2014
Country/TerritoryGermany
CityDresden
Period15/06/1420/06/14

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