Studies on interface of Cu/Al and Al/SiO2/Si

Yoshihiro Irie; Hiromi Tanaka; Kentaro Kinoshita; Satoru Kishida

doi:10.1016/j.proeng.2015.09.220

Studies on interface of Cu/Al and Al/SiO₂/Si

Yoshihiro Irie, Hiromi Tanaka, Kentaro Kinoshita, Satoru Kishida

Department of Applied Physics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We prepared Cu/Al and Al/SiO₂/Si samples by sputtering Cu on Al metals and Al on SiO₂/Si, respectively. We investigated the interfaces between Cu film and Al metal, or between Al film and SiO₂/Si by XPS (X-ray photoelectron spectroscopy). From the results, we found that Cu metals were oxidized in the Cu/Al samples and changed to Cu⁺ and Cu²⁺. In addition, the thickness of Cu metal in Cu/Al and Al metal in Al/SiO₂/Si are thought to be less than 100 Å. At the same time, the Cu film deposited by a sputtering method may be oxidized more than the Al metal, which is prepared by the method of cold rolling. The XPS results of Al/SiO₂/Si samples indicate that there may be oxygen-reduced Al₂O_3-x layer on the interface between Al and SiO₂, and that there are inhomogeneous SiO_2-x in the Ar⁺ etched surface of the Al/SiO₂/Si sample.

Original language	English
Pages (from-to)	144-151
Number of pages	8
Journal	Procedia Engineering
Volume	141
DOIs	https://doi.org/10.1016/j.proeng.2015.09.220
Publication status	Published - 2016
Event	8th International Conference on Materials for Advanced Technologies, ICMAT 2015 - Suntec, Singapore Duration: 28 Jun 2015 → 3 Jul 2015

Keywords

XPS
chemical bond nature
composition
interface
surface

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10.1016/j.proeng.2015.09.220

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@article{504e5487e2874562aabcc417eda1d98b,

title = "Studies on interface of Cu/Al and Al/SiO2/Si",

abstract = "We prepared Cu/Al and Al/SiO2/Si samples by sputtering Cu on Al metals and Al on SiO2/Si, respectively. We investigated the interfaces between Cu film and Al metal, or between Al film and SiO2/Si by XPS (X-ray photoelectron spectroscopy). From the results, we found that Cu metals were oxidized in the Cu/Al samples and changed to Cu+ and Cu2+. In addition, the thickness of Cu metal in Cu/Al and Al metal in Al/SiO2/Si are thought to be less than 100 {\AA}. At the same time, the Cu film deposited by a sputtering method may be oxidized more than the Al metal, which is prepared by the method of cold rolling. The XPS results of Al/SiO2/Si samples indicate that there may be oxygen-reduced Al2O3-x layer on the interface between Al and SiO2, and that there are inhomogeneous SiO2-x in the Ar+ etched surface of the Al/SiO2/Si sample.",

keywords = "XPS, chemical bond nature, composition, interface, surface",

author = "Yoshihiro Irie and Hiromi Tanaka and Kentaro Kinoshita and Satoru Kishida",

note = "Publisher Copyright: {\textcopyright} 2016 The Authors.; 8th International Conference on Materials for Advanced Technologies, ICMAT 2015 ; Conference date: 28-06-2015 Through 03-07-2015",

year = "2016",

doi = "10.1016/j.proeng.2015.09.220",

language = "English",

volume = "141",

pages = "144--151",

journal = "Procedia Engineering",

issn = "1877-7058",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Studies on interface of Cu/Al and Al/SiO2/Si

AU - Irie, Yoshihiro

AU - Tanaka, Hiromi

AU - Kinoshita, Kentaro

AU - Kishida, Satoru

PY - 2016

Y1 - 2016

N2 - We prepared Cu/Al and Al/SiO2/Si samples by sputtering Cu on Al metals and Al on SiO2/Si, respectively. We investigated the interfaces between Cu film and Al metal, or between Al film and SiO2/Si by XPS (X-ray photoelectron spectroscopy). From the results, we found that Cu metals were oxidized in the Cu/Al samples and changed to Cu+ and Cu2+. In addition, the thickness of Cu metal in Cu/Al and Al metal in Al/SiO2/Si are thought to be less than 100 Å. At the same time, the Cu film deposited by a sputtering method may be oxidized more than the Al metal, which is prepared by the method of cold rolling. The XPS results of Al/SiO2/Si samples indicate that there may be oxygen-reduced Al2O3-x layer on the interface between Al and SiO2, and that there are inhomogeneous SiO2-x in the Ar+ etched surface of the Al/SiO2/Si sample.

AB - We prepared Cu/Al and Al/SiO2/Si samples by sputtering Cu on Al metals and Al on SiO2/Si, respectively. We investigated the interfaces between Cu film and Al metal, or between Al film and SiO2/Si by XPS (X-ray photoelectron spectroscopy). From the results, we found that Cu metals were oxidized in the Cu/Al samples and changed to Cu+ and Cu2+. In addition, the thickness of Cu metal in Cu/Al and Al metal in Al/SiO2/Si are thought to be less than 100 Å. At the same time, the Cu film deposited by a sputtering method may be oxidized more than the Al metal, which is prepared by the method of cold rolling. The XPS results of Al/SiO2/Si samples indicate that there may be oxygen-reduced Al2O3-x layer on the interface between Al and SiO2, and that there are inhomogeneous SiO2-x in the Ar+ etched surface of the Al/SiO2/Si sample.

KW - XPS

KW - chemical bond nature

KW - composition

KW - interface

KW - surface

UR - http://www.scopus.com/inward/record.url?scp=84976447928&partnerID=8YFLogxK

U2 - 10.1016/j.proeng.2015.09.220

DO - 10.1016/j.proeng.2015.09.220

M3 - Conference article

AN - SCOPUS:84976447928

SN - 1877-7058

VL - 141

SP - 144

EP - 151

JO - Procedia Engineering

JF - Procedia Engineering

T2 - 8th International Conference on Materials for Advanced Technologies, ICMAT 2015

Y2 - 28 June 2015 through 3 July 2015

ER -

Studies on interface of Cu/Al and Al/SiO₂/Si

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Keywords

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