Structure analysis of self-assembled ErSi2 nanowires formed on Si (110) substrates

Yusuke Katayama, Ryouki Watanabe, Tomohiro Kobayashi, Takashi Meguro, Xinwei Zhao

Research output: Contribution to journalArticlepeer-review

Abstract

The ErSi2 nanowires were formed on Si(110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi2 thin layers covering a wire-like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high-temperature annealing.

Original languageEnglish
Pages (from-to)58-62
Number of pages5
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume167
Issue number3
DOIs
Publication statusPublished - May 2009

Keywords

  • Crystal structure
  • ErSi
  • Nanowire
  • TEM

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