The ErSi2 nanowires were formed on Si(110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi2 thin layers covering a wire-like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high-temperature annealing.
|Number of pages||5|
|Journal||Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)|
|Publication status||Published - May 2009|
- Crystal structure