STM study of Si(1 1 3) 3 × 2-Ga surface

Katsumi Irokawa; Yuichiro Nagura; Hidekazu Kobayashi; Shinsuke Hara; Hiroki I. Fujishiro; Hirofumi Miki; Akira Kawazu; Kazuyuki Watanabe

doi:10.1016/j.susc.2009.02.036

STM study of Si(1 1 3) 3 × 2-Ga surface

Katsumi Irokawa, Yuichiro Nagura, Hidekazu Kobayashi, Shinsuke Hara, Hiroki I. Fujishiro, Hirofumi Miki, Akira Kawazu, Kazuyuki Watanabe

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The Ga-adsorbed structure on Si(1 1 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.

Original language	English
Pages (from-to)	1197-1202
Number of pages	6
Journal	Surface Science
Volume	603
Issue number	9
DOIs	https://doi.org/10.1016/j.susc.2009.02.036
Publication status	Published - 1 May 2009

Keywords

Density functional calculations
Gallium
Scanning tunneling microscopy
Silicon
Surface structure

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10.1016/j.susc.2009.02.036

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title = "STM study of Si(1 1 3) 3 × 2-Ga surface",

abstract = "The Ga-adsorbed structure on Si(1 1 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.",

keywords = "Density functional calculations, Gallium, Scanning tunneling microscopy, Silicon, Surface structure",

author = "Katsumi Irokawa and Yuichiro Nagura and Hidekazu Kobayashi and Shinsuke Hara and Fujishiro, \{Hiroki I.\} and Hirofumi Miki and Akira Kawazu and Kazuyuki Watanabe",

year = "2009",

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doi = "10.1016/j.susc.2009.02.036",

language = "English",

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TY - JOUR

T1 - STM study of Si(1 1 3) 3 × 2-Ga surface

AU - Irokawa, Katsumi

AU - Nagura, Yuichiro

AU - Kobayashi, Hidekazu

AU - Hara, Shinsuke

AU - Fujishiro, Hiroki I.

AU - Miki, Hirofumi

AU - Kawazu, Akira

AU - Watanabe, Kazuyuki

PY - 2009/5/1

Y1 - 2009/5/1

N2 - The Ga-adsorbed structure on Si(1 1 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.

AB - The Ga-adsorbed structure on Si(1 1 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.

KW - Density functional calculations

KW - Gallium

KW - Scanning tunneling microscopy

KW - Silicon

KW - Surface structure

UR - https://www.scopus.com/pages/publications/65249121338

U2 - 10.1016/j.susc.2009.02.036

DO - 10.1016/j.susc.2009.02.036

M3 - Article

AN - SCOPUS:65249121338

SN - 0039-6028

VL - 603

SP - 1197

EP - 1202

JO - Surface Science

JF - Surface Science

IS - 9

ER -

STM study of Si(1 1 3) 3 × 2-Ga surface

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Keywords

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