Spectral Responsivity Characteristics of Front-Side Illumination InGaAs PhotoFETs on Si

Kazuaki Oishi, Hiroyuki Ishii, Wen Hsin Chang, Hiroto Ishii, Akira Endoh, Hiroki Fujishiro, Tatsuro Maeda

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


InGaAs photo field-effect transistor (photoFET) on Si is the most promising candidate for a high responsivity shortwave infrared (SWIR) photodetector toward monolithic integration with Si-LSI. To evaluate spectral responsivity characteristics of front-side illumination (FSI) InGaAs photoFETs integrated on Si wafer, the photocurrent measurement system with a wide area SWIR illumination is developed. This allows us to extract more accurate incident power density illuminating on the whole sensing area. From the incident power dependence of the responsivity, the spectral responsivity characteristics at a constant incident power are derived. It is found that the spectral responsivity characteristics of InGaAs photoFETs on Si present higher and broader responsivity than that of InGaAs photodiode.

Original languageEnglish
Article number2000439
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number3
Publication statusPublished - Feb 2021


  • InGaAs
  • photoFETs
  • shortwave infrared


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