Single-electron charging effects in a semiconductor quantum wire with side-coupled quantum dot

Andreas Richter, Masumi Yamaguchi, Tatsushi Akazaki, Hiroyuki Tamura, Hideaki Takayanagi

Research output: Contribution to journalArticle

3 Citations (Scopus)


We report on experimental studies of a quantum wire with side-coupled quantum dot defined by surface gate electrodes patterned on top of a GaAs/AlGaAs heterostructure. The dot is side-coupled to the wire by means of a split-gate electrode allowing for a control of coupling strength. Clear signatures of single-electron charging are observed in the low-temperature wire conductance within a broad range of tunnel couplings and wire widths. The oscillations in wire conductance associated with Coulomb peaks in the dot remain being visible for split-gate conductances exceeding G0 = 2e2/h and for mean wire conductances of up to 2.5G0. We explain this behavior as consequence of the two-dimensional sample geometry which can lead to asymmetric and effectively reduced coupling between the dot and the conducting modes in the wire and propose a modified sample layout that should be suitable to increase the coupling.

Original languageEnglish
Pages (from-to)7144-7149
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
Publication statusPublished - 1 Oct 2004


  • AlGaAs
  • Coulomb blockade
  • Electronic transport
  • GaAs
  • Quantum wire
  • Side-coupled quantum dot
  • Single electron tunneling

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