Single crystal growth in series of layered oxyselenide Sr2MCu2Se2O2 (M = Co, Ni) by melt-solidification method

Takahiro Kato, Yuki Iwasa, Yuui Yokota, Shigeyuki Ishida, Junichiro Kato, Yutaro Mino, S. Pavan Kumar Naik, Takahiko Horiai, Akira Yoshikawa, Taichiro Nishio, Hiroshi Eisaki, Hiraku Ogino

Research output: Contribution to journalArticlepeer-review

Abstract

Single crystals of layered oxychalcogenide Sr2MCu2Se2O2 (M = Co, Ni) have been successfully grown by the melt-solidification method. Thermal analysis and X-ray diffraction measurement results revealed that these compounds are congruent melting under a sealed environment similar to Sr2ZnCu2Se2O2, while melting points are slightly different. The plate-like single crystals on the order of mm2 were obtained by melt solidification. The anisotropy of resistivity in Sr2CoCu2Se2O2 showed that the resistivity in the c-axis direction was about 200 times higher than in the a(b)-axis direction, reflecting the two-dimensional crystal structure. These results indicate that there are several congruent melting layered mixed-anion compounds, even though they have complex crystal structures with multiple components. Thus, the single crystal growth method by melt-solidification under a sealed environment has the potential to be applied to other relative compounds.

Original languageEnglish
Article number220512
Pages (from-to)498-503
Number of pages6
JournalJournal of the Korean Ceramic Society
Volume62
Issue number3
DOIs
Publication statusPublished - May 2025

Keywords

  • Layered material
  • Melt growth
  • Mixed-anion compound
  • Single crystal

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